It remains in the current standard UFS 2.1, but significantly improves the performance for what seems to be the memory of the next big Samsung phone. UFS 3.0 will have to wait.
Samsung today introduced its new memories of up to 1 TB of capacity for mobile devices, with certification UFS 2.1 – Ultra Fast Storage, ultra- fast storage. Predictably, these chips will be the ones that turn the most loaded version of the next Galaxy S10 into the first phone with a capacity worthy of a conventional computer.
The Galaxy Note 9 was already capable of adding up to 1 TB of memory, with one difference: it added up to 512 GB of internal storage with support for micro SD cards of the same capacity. With this new chip, all the memory is in the phone itself, which is faster and also safer.
This small chip, the same size as the previous generation and just over one square centimetre, combines 16- layer V-NAND with its own controller. According to Samsung, with this chip we could store up to 260 videos of ten minutes in 4K resolution. In comparison, with 64 GB of memory 13 would fit.
It is not, however, the latest iteration UFS 3.0, but the variant that we see since the arrival of the Galaxy S8 – but not all -. Even so, from Samsung they promise a sensible improvement of the speed, especially in sustained writing, where it reaches 1,000 MB / s. Also in the section of random access, where compared to the previous generation UFS 2.1 reading accesses per second up to 38%, while in writing up 25%.
After four years in the UFS standard, it is expected to be during this first half of 2019 when Samsung presents the first UFS 3.0 memories , which will allow us to approach speeds of up to 3 GB / meanwhile, Samsung has already put date to the presentation of the next generation of Galaxy S: next February 20 . It will also be an independent and anticipated event at the Mobile World Congress in Barcelona.
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